EC1202--ELECTRON DEVICES - Regulation 2004 - Anna University Chennai Syllabus

EC1202--ELECTRON DEVICES

ELECTRON BALLISTICS AND INTRINSIC SEMICONDUCTORS

Force on charge in electric field - Motion of Charge in uniform and time varying electric fields - Force on a moving charge in a magnetic field - calculation of cyclotron frequency - calculation of electrostatic and magnetic deflection sensitivity. Energy band structure of conductors, semiconductors and insulators - Density distribution of available energy states in semiconductors - Fermi- Diac probability distribution function at different temperatures - Thermal generation of carriers - Calculation of electron and hole densities in intrinsic semiconductors - Intrinsic concentration - Mass Action Law.

EXTRINSIC SEMICONDUCTOR AND PN JUNCTIONS

N and P type semiconductors and their energy band structures - Law of electrical neutrality - Calculation of location of Fermi level and free electron and hole densities in extrinsic semiconductors - Mobility, drift current and conductivity - Diffusion current - Continuity equation - Hall effect. Band structure of PN Junction - Current Component in a PN Junction - Derivation of diode equation - Temperature dependence of diode characteristics.

SWITCHING CHARACTERISTICS OF PN JUNCTION AND SPECIAL DI

Calculation of transition and diffusion capacitance - Varactor diode - charge control description of diode - switching characteristics of diode - Mechanism of avalanche and Zener breakdown - Temperature dependence of breakdown voltages - Backward diode - Tunneling effect in thin barriers Tunnel diode - Photo diode - Light emitting diodes.

BIPOLAR JUNCTION TRANSISTORS AND FIELD EFFECT TRANSISTO

Construction of PNP and NPN transistors - BJT current components - Emitter to collector and base to collector current gains - Base width modulation CB and CE characteristics - Breakdown characteristics - Ebers - Moll model - Transistor switching times. Construction and Characteristics of JFET - Relation between Pinch off Voltage and drain current - Derivation. MOSFETS - Enhancement and depletion types.

METAL SEMICONDUCTOR CONTACTS AND POWER CONTROL DEVICES

Metal Semiconductor Contacts - Energy band diagram of metal semiconductor junction Schottky diode and ohmic contacts. Power control devices: Characteristics and equivalent circuit of UJT - intrinsic stand off ratio. PNPN diode - Two transistor model, SCR, Triac, Diac.

Reference

Text Books

1. Jacob Millman & Christos C.Halkias, -Electronic Devices and Circuits- Tata McGraw-Hill, 1991

Reference Books

1. Nandita Das Gupta and Amitava Das Gupta, Semiconductor Devices - Modelling and Technology, Prentice Hall of India, 2004. 2. Donald A.Neaman,- Semiconductor Physics and Devices- 3rd Ed., Tata McGraw-Hill 2002. 3. S.Salivahanan, N.Sureshkumar and A.Vallavaraj, Electronic Devices and Circuits, TMH, 1998. 4. S.M.Sze, Semiconductor Devices - Physics and Technology, 2nd edn. John Wiley, 2002. 5. Ben G.Streetman and Sanjay Banerjee, Solid State Electronic Devices, Pearson Education 2000.